2N5262 Specs and Replacement
Type Designator: 2N5262
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO39
2N5262 Substitution
- BJT ⓘ Cross-Reference Search
2N5262 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
Detailed specifications: 2N5254, 2N5254-78, 2N5255, 2N5255-78, 2N5256, 2N5256-78, 2N525A, 2N526, 2N2907, 2N5263, 2N5264, 2N526A, 2N527, 2N5271, 2N5272, 2N5276, 2N5279
Keywords - 2N5262 pdf specs
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History: 2N6127 | ZTX553 | 2N6122 | 2SC6097-E | 2N6124 | 2N6128
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