All Transistors. TIP35A Datasheet

 

TIP35A Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP35A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TOP3

TIP35A Transistor Equivalent Substitute - Cross-Reference Search

 

TIP35A Datasheet (PDF)

1.1. tip35are.pdf Size:157K _motorola

TIP35A
TIP35A

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for generalpurpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product ?h

1.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35A
TIP35A

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS

 5.1. tip35cw tip36cw.pdf Size:190K _update

TIP35A
TIP35A

TIP35CW TIP36CW Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exc

5.2. tip35rev.pdf Size:169K _motorola

TIP35A
TIP35A

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for generalpurpose power amplifier and switching applications. TIP35C* PNP 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product ?hf

 5.3. tip35c tip36c.pdf Size:194K _st2

TIP35A
TIP35A

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gai

5.4. tip35.pdf Size:39K _st2

TIP35A
TIP35A

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, TIP3

 5.5. tip35,36.pdf Size:43K _st2

TIP35A
TIP35A

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DIAGRA

5.6. tip35cp tip36cp.pdf Size:196K _st2

TIP35A
TIP35A

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gain

5.7. tip35c.pdf Size:138K _utc

TIP35A
TIP35A

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS ? DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. ? INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Ha

5.8. tip35-a-b-c.pdf Size:86K _bourns

TIP35A
TIP35A

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) ? 125 W at 25C Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings a

5.9. tip35 tip36.pdf Size:154K _mospec

TIP35A
TIP35A

A A A

5.10. tip35f tip36.pdf Size:67K _cdil

TIP35A
TIP35A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO Co

5.11. tip35ca.pdf Size:440K _kec

TIP35A
TIP35A

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

5.12. tip35c.pdf Size:289K _kec

TIP35A
TIP35A

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax:25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

5.13. tip35d.pdf Size:227K _inchange_semiconductor

TIP35A
TIP35A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TIP35D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Complement to Type TIP36D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching

5.14. tip35 35a 35b 35c.pdf Size:160K _inchange_semiconductor

TIP35A
TIP35A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP36/36A/36B/36C Ў¤ DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A/35B/35

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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