All Transistors. TIP35A Datasheet

 

TIP35A Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP35A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TOP3

TIP35A Transistor Equivalent Substitute - Cross-Reference Search

 

TIP35A Datasheet (PDF)

1.1. tip35are.pdf Size:157K _motorola

TIP35A
TIP35A

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general–purpose power amplifier and switching applications. TIP35C* • 25 A Collector Current PNP • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V TIP36A • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — ?h

1.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35A
TIP35A

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125 WATTS

 5.1. tip35cw tip36cw.pdf Size:190K _update

TIP35A
TIP35A

TIP35CW TIP36CW Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exc

5.2. tip35rev.pdf Size:169K _motorola

TIP35A
TIP35A

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general–purpose power amplifier and switching applications. TIP35C* PNP • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V TIP36A • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — ?hf

 5.3. tip35c tip36c.pdf Size:194K _st2

TIP35A
TIP35A

TIP35C TIP36C Complementary power transistors . Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose 3 2 ¦ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exceptional high gai

5.4. tip35.pdf Size:39K _st2

TIP35A
TIP35A

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, TIP3

 5.5. tip35,36.pdf Size:43K _st2

TIP35A
TIP35A

TIP35C TIP36B/TIP36C ® COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DIAGRA

5.6. tip35cp tip36cp.pdf Size:196K _st2

TIP35A
TIP35A

TIP35CP TIP36CP Complementary power transistors . Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN-PNP transistors Applications ¦ General purpose 3 ¦ Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exceptional high gain

5.7. tip35c.pdf Size:138K _utc

TIP35A
TIP35A

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS ? DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. ? INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Ha

5.8. tip35-a-b-c.pdf Size:86K _bourns

TIP35A
TIP35A

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) ? 125 W at 25°C Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings a

5.9. tip35 tip36.pdf Size:154K _mospec

TIP35A
TIP35A

A A A

5.10. tip35f tip36.pdf Size:67K _cdil

TIP35A
TIP35A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO Co

5.11. tip35ca.pdf Size:440K _kec

TIP35A
TIP35A

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

5.12. tip35c.pdf Size:289K _kec

TIP35A
TIP35A

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax:25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

5.13. tip35d.pdf Size:227K _inchange_semiconductor

TIP35A
TIP35A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TIP35D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Complement to Type TIP36D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching

5.14. tip35 35a 35b 35c.pdf Size:160K _inchange_semiconductor

TIP35A
TIP35A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP36/36A/36B/36C Ў¤ DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A/35B/35

Datasheet: TIP34 , TIP34A , TIP34B , TIP34C , TIP34D , TIP34E , TIP34F , TIP35 , KT829A , TIP35B , TIP35C , TIP35D , TIP35E , TIP35F , TIP36 , TIP36A , TIP36B .

Back to Top

 


TIP35A
  TIP35A
  TIP35A
 

social 

LIST

Last Update

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

Back to Top