TIP536 Datasheet. Specs and Replacement

Type Designator: TIP536  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 TIP536 Substitution

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TIP536 datasheet

 9.1. Size:127K  mospec

 tip51 tip52 tip53 tip54.pdf pdf_icon

TIP536

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 9.2. Size:218K  inchange semiconductor

 tip53.pdf pdf_icon

TIP536

isc Silicon NPN Power Transistors TIP53 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TIP529, TIP53, TIP530, TIP531, TIP532, TIP533, TIP534, TIP535, BD135, TIP537, TIP538, TIP539, TIP54, TIP541, TIP542, TIP543, TIP5433

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