All Transistors. TIP536 Datasheet

 

TIP536 Datasheet and Replacement


   Type Designator: TIP536
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

 TIP536 Substitution

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TIP536 Datasheet (PDF)

 9.1. Size:127K  mospec
 tip51 tip52 tip53 tip54.pdf pdf_icon

TIP536

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 9.2. Size:218K  inchange semiconductor
 tip53.pdf pdf_icon

TIP536

isc Silicon NPN Power Transistors TIP53DESCRIPTIONDC Current Gain -h = 30~150@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI951 | MMBT930R | TIP56 | 2SC4106M

Keywords - TIP536 transistor datasheet

 TIP536 cross reference
 TIP536 equivalent finder
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