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TIP536 Specs and Replacement


   Type Designator: TIP536
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 TIP536 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP536 detailed specifications

 9.1. Size:127K  mospec
 tip51 tip52 tip53 tip54.pdf pdf_icon

TIP536

A A A ... See More ⇒

 9.2. Size:218K  inchange semiconductor
 tip53.pdf pdf_icon

TIP536

isc Silicon NPN Power Transistors TIP53 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TIP529 , TIP53 , TIP530 , TIP531 , TIP532 , TIP533 , TIP534 , TIP535 , BD135 , TIP537 , TIP538 , TIP539 , TIP54 , TIP541 , TIP542 , TIP543 , TIP5433 .

Keywords - TIP536 transistor specs

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