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TIP539 Specs and Replacement


   Type Designator: TIP539
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 220 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 TIP539 Transistor Equivalent Substitute - Cross-Reference Search

   

TIP539 detailed specifications

 9.1. Size:127K  mospec
 tip51 tip52 tip53 tip54.pdf pdf_icon

TIP539

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 9.2. Size:218K  inchange semiconductor
 tip53.pdf pdf_icon

TIP539

isc Silicon NPN Power Transistors TIP53 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TIP531 , TIP532 , TIP533 , TIP534 , TIP535 , TIP536 , TIP537 , TIP538 , TIP31 , TIP54 , TIP541 , TIP542 , TIP543 , TIP5433 , TIP544 , TIP545 , TIP546 .

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