All Transistors. 2N529 Datasheet

 

2N529 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N529

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 28 pF

Forward Current Transfer Ratio (hFE), MIN: 18

Noise Figure, dB: -

Package: TO5

2N529 Transistor Equivalent Substitute - Cross-Reference Search

 

2N529 Datasheet (PDF)

0.1. 2n5294 2n5296 2n5298.pdf Size:71K _central

2N529

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.2. 2n5294 96 98.pdf Size:343K _cdil

2N529
2N529

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N5294, 2N5296, 2N52982N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORSMedium Power Switching and Amplifier ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E

 0.3. 2n5293 2n5295 2n5297.pdf Size:106K _jmnic

2N529
2N529

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA

0.4. 2n5294 2n5296 2n5298.pdf Size:127K _jmnic

2N529
2N529

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

 0.5. 2n5293 2n5295 2n5297.pdf Size:61K _inchange_semiconductor

2N529
2N529

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

0.6. 2n5294 2n5296 2n5298.pdf Size:121K _inchange_semiconductor

2N529
2N529

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

0.7. 2n5298.pdf Size:58K _inchange_semiconductor

2N529
2N529

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5298 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation APPLICATIONS Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATING

0.8. 2n5297.pdf Size:187K _inchange_semiconductor

2N529
2N529

isc Silicon NPN Power Transistor 2N5297DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 1.5A, I = 0.15ACE(sat) C BWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power

Datasheet: 2N5282 , 2N5283 , 2N5284 , 2N5285 , 2N5286 , 2N5287 , 2N5288 , 2N5289 , BD139 , 2N5290 , 2N5291 , 2N5292 , 2N5293 , 2N5294 , 2N5295 , 2N5296 , 2N5297 .

 

 
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