TIS97 Datasheet. Specs and Replacement

Type Designator: TIS97  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

 TIS97 Substitution

- BJT ⓘ Cross-Reference Search

 

TIS97 datasheet

 ..1. Size:293K  fairchild semi

tis97.pdf pdf_icon

TIS97

Discrete POWER & Signal Technologies TIS97 E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V C... See More ⇒

Detailed specifications: TIS90, TIS90M, TIS91, TIS91M, TIS92, TIS92M, TIS93, TIS93M, A1941, TIS98, TIS99, TIX1392, TIX1393, TIX2150, TIX2151, TIX3015, TIX3033

Keywords - TIS97 pdf specs

 TIS97 cross reference

 TIS97 equivalent finder

 TIS97 pdf lookup

 TIS97 substitution

 TIS97 replacement