2N5297 Datasheet. Specs and Replacement
Type Designator: 2N5297 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
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2N5297 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO... See More ⇒
isc Silicon NPN Power Transistor 2N5297 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 1.5A, I = 0.15A CE(sat) C B Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N529, 2N5290, 2N5291, 2N5292, 2N5293, 2N5294, 2N5295, 2N5296, C5198, 2N5298, 2N53, 2N530, 2N5301, 2N5302, 2N5303, 2N5304, 2N5305
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