TK250A Datasheet. Specs and Replacement
Type Designator: TK250A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO5
TK250A Substitution
- BJT ⓘ Cross-Reference Search
TK250A datasheet
IXTK 250N10 VDSS = 100 V High Current ID25 = 250 A MegaMOSTMFET RDS(on) = 5 m N-Channel Enhancement Mode Symbol Test conditions Maximum ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 100 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C MOSFET chip capability 250 A D ID(RMS) Externa... See More ⇒
Detailed specifications: TK21C, TK23, TK23A, TK23C, TK24, TK24B, TK24C, TK25, 2SC5200, TK251A, TK252A, TK253A, TK254A, TK255A, TK256A, TK257A, TK258A
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