TK70A Datasheet, Equivalent, Cross Reference Search
Type Designator: TK70A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.325 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
TK70A Transistor Equivalent Substitute - Cross-Reference Search
TK70A Datasheet (PDF)
tk70a06j1.pdf
TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK70A06J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 87nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 10 A (max) (V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .