TN2107 Datasheet and Replacement
Type Designator: TN2107
Material of Transistor: Si
Polarity: NPN
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO237
TN2107 Substitution
TN2107 Datasheet (PDF)
ixtn210p10t.pdf

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M
tn2106.pdf

Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe
Datasheet: TMPTA43 , TN1613 , TN1613A , TN1613R , TN1711 , TN1893 , TN1893R , TN2102 , TIP2955 , TN2218 , TN2218A , TN2219 , TN2219A , TN2221 , TN2221A , TN2221AR , TN2221R .
History: MP15A | KA4A4Z | GFT43A | NTE268 | NKT242 | BD371A-25 | FSB660
Keywords - TN2107 transistor datasheet
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History: MP15A | KA4A4Z | GFT43A | NTE268 | NKT242 | BD371A-25 | FSB660



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