TN2107 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN2107
Material of Transistor: Si
Polarity: NPN
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO237
TN2107 Transistor Equivalent Substitute - Cross-Reference Search
TN2107 Datasheet (PDF)
ixtn210p10t.pdf
Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M
tn2106.pdf
Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
