All Transistors. TN2107 Datasheet

 

TN2107 Datasheet and Replacement


   Type Designator: TN2107
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO237
 

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TN2107 Datasheet (PDF)

 9.1. Size:178K  ixys
ixtn210p10t.pdf pdf_icon

TN2107

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M

 9.2. Size:716K  supertex
tn2106.pdf pdf_icon

TN2107

Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe

Datasheet: TMPTA43 , TN1613 , TN1613A , TN1613R , TN1711 , TN1893 , TN1893R , TN2102 , TIP2955 , TN2218 , TN2218A , TN2219 , TN2219A , TN2221 , TN2221A , TN2221AR , TN2221R .

History: MP15A | KA4A4Z | GFT43A | NTE268 | NKT242 | BD371A-25 | FSB660

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