TN2222AR Datasheet, Equivalent, Cross Reference Search
Type Designator: TN2222AR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
TN2222AR Transistor Equivalent Substitute - Cross-Reference Search
TN2222AR Datasheet (PDF)
stn2222a.pdf
STN2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 : Year & Week Code Absolute maximum
stn2222as.pdf
STN2222AS NPN Silicon Transistor Descriptions General purpose application COLLECTOR Switching application 331Features BASE Large collector current Low collector saturation voltage 2EMITTER Complementary pair with STN2907AS SOT-23 Ordering Information Part Number Marking Package XA STN2222AS SOT-23 * Device
stn2222asf.pdf
STN2222ASFNPN Silicon TransistorDescriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&
ktn2222ae.pdf
SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary
ktn2222s ktn2222as.pdf
SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,
btn2222a3.pdf
Spec. No. : C227A3 Issued Date : 2003.03.26 CYStech Electronics Corp.Revised Date : 2014.04.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222
btn2222an3.pdf
Spec. No. : C227N3 Issued Date : 2003.06.11 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo
btn2222al3.pdf
Spec. No. : C227L3 Issued Date : 2004.03.17 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 SymbolBTN2222AL3 BBase CCollector E
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
