TN3020 Datasheet. Specs and Replacement
Type Designator: TN3020 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO237
TN3020 Substitution
- BJT ⓘ Cross-Reference Search
TN3020 datasheet
Spec. No. C737J3 Issued Date 2011.11.22 CYStech Electronics Corp. Revised Date 2014.03.14 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTN3023J3 ID 30A VGS=10V, ID=20A 14m RDSON(TYP) Features VGS=4.5V, ID=10A 21m Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C... See More ⇒
Detailed specifications: TN2907AR, TN2907R, TN2923, TN2924, TN2925, TN2926, TN3013, TN3019, TIP122, TN3053, TN3053A, TN3244, TN3245, TN3250, TN3250A, TN3251, TN3252
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