TN3053A Datasheet. Specs and Replacement
Type Designator: TN3053A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
TN3053A Substitution
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TN3053A datasheet
UNISONIC TECHNOLOGIES CO., LTD UTN3055 Power MOSFET 12A, 25V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UTN3055 is N-channel logic level enhancement mode field effect transistor. SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UTN3055L-TN3-R UTN3055G-TN3-R TO-252 G D S Tape Reel ... See More ⇒
Spec. No. C390J3 Issued Date 2007.06.12 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V ID 15A MTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3 G Gate G D S D ... See More ⇒
Spec. No. C390L3 Issued Date 2010.10.05 CYStech Electronics Corp. Revised Date 2012.08.20 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3055L3 ID 8.3A 19m (typ) RDSON@VGS=10V, ID=4A 25m (typ) RDSON@VGS=4.5V, ID=3A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating p... See More ⇒
Detailed specifications: TN2923, TN2924, TN2925, TN2926, TN3013, TN3019, TN3020, TN3053, 13007, TN3244, TN3245, TN3250, TN3250A, TN3251, TN3252, TN3253, TN3390
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