TN4401 Datasheet. Specs and Replacement
Type Designator: TN4401 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
TN4401 Substitution
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TN4401 datasheet
Spec. No. C910Q8 Issued Date 2013.05.21 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 20V MTN4402Q8 ID 20A 4.3m VGS=4.5V, ID=20A RDSON(TYP) 5.3m VGS=2.5V, ID=20A Description The MTN4402Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switc... See More ⇒
STN4402 STN4402 STN4402 STN4402 N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f... See More ⇒
Detailed specifications: TN4258, TN4258A, TN4274, TN4275, TN4314, TN4354, TN4355, TN4356, A1941, TN4403, TN4888, TN4889, TN4890, TN4916, TN4917, TN4964, TN4965
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