TN5130 Datasheet. Specs and Replacement
Type Designator: TN5130 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO92
TN5130 Substitution
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TN5130 datasheet
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Detailed specifications: TN4917, TN4964, TN4965, TN5022, TN5023, TN5127, TN5128, TN5129, BD335, TN5131, TN5132, TN5133, TN5134, TN5135, TN5136, TN5137, TN5138
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