TN5401 Datasheet. Specs and Replacement
Type Designator: TN5401 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
TN5401 Substitution
- BJT ⓘ Cross-Reference Search
TN5401 datasheet
Spec. No. C581J3 Issued Date 2011.10.31 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN540J3 ID 25A 49m VGS=10V, ID=18A RDSON(TYP) 48m VGS=4.5V, ID=10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivale... See More ⇒
Detailed specifications: TN5139, TN5140, TN5141, TN5142, TN5143, TN5172, TN5179, TN5400R, TIP42, TN5401R, TN5447, TN5449, TN5550, TN5550R, TN5551, TN5551R, TN5816
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