All Transistors. TN930R Datasheet

 

TN930R Datasheet, Equivalent, Cross Reference Search


   Type Designator: TN930R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 TN930R Transistor Equivalent Substitute - Cross-Reference Search

   

TN930R Datasheet (PDF)

 9.1. Size:270K  st
 stn93003.pdf

TN930R TN930R

STN93003High voltage fast-switchingPNP power transistorFeatures High voltage capability Very high switching speed 43Application21 Electronics ballasts for fluorescent lightingSOT-223 DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Iswitching speeds and high voltage capability. It uses a cellular emit

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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