TN930R Datasheet and Replacement
Type Designator: TN930R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
TN930R Substitution
TN930R Datasheet (PDF)
stn93003.pdf

STN93003High voltage fast-switchingPNP power transistorFeatures High voltage capability Very high switching speed 43Application21 Electronics ballasts for fluorescent lightingSOT-223 DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Iswitching speeds and high voltage capability. It uses a cellular emit
Datasheet: TN901 , TN911 , TN918 , TN918R , TN929 , TN929A , TN930 , TN930A , 2SC1740 , TP1613 , TP1613A , TP1613R , TP1711 , TP1893 , TP1893R , TP2218 , TP2218A .
History: 2SA477 | D45C8 | BD533A
Keywords - TN930R transistor datasheet
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History: 2SA477 | D45C8 | BD533A



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