TP3414 Datasheet, Equivalent, Cross Reference Search
Type Designator: TP3414
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
TP3414 Transistor Equivalent Substitute - Cross-Reference Search
TP3414 Datasheet (PDF)
mtp3413n3.pdf
Spec. No. : C394N3 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20VMTP3413N3 ID -4.9AVGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5ARDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig
mtp3415kn3.pdf
Spec. No. : C589N3 Issued Date : 2010.11.09 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -4.4AVGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KVAdvanced trench process technology High density cell design for ultra lo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
