All Transistors. TP3415 Datasheet

 

TP3415 Datasheet and Replacement


   Type Designator: TP3415
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO92
 

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TP3415 Datasheet (PDF)

 0.1. Size:293K  cystek
 mtp3415kn3.pdf pdf_icon

TP3415

Spec. No. : C589N3 Issued Date : 2010.11.09 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -4.4AVGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KVAdvanced trench process technology High density cell design for ultra lo

 9.1. Size:353K  cystek
 mtp3413n3.pdf pdf_icon

TP3415

Spec. No. : C394N3 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20VMTP3413N3 ID -4.9AVGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5ARDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC418VI | DRA5144E

Keywords - TP3415 transistor datasheet

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