2N5322GN Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5322GN
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO39
2N5322GN Transistor Equivalent Substitute - Cross-Reference Search
2N5322GN Datasheet (PDF)
2n5322 2n5323.pdf
2N53222N5323SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNPTRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND2N5321DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxialplanar PNP transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl
2n5322.pdf
2N5322SMALL SIGNAL PNP TRANSISTORDESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNPtransistor in Jedec TO-39 metal case. It isespecially intended for high-voltage mediumpower application in industrial and commercialequipments.The complementary NPN type is 2N5320.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-B
2n5320 2n5321 2n5322 2n5323.pdf
DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C
Datasheet: 2N5321O , 2N5321R , 2N5321V , 2N5321W , 2N5321Y , 2N5322 , 2N5322BL , 2N5322BR , 2SD313 , 2N5322O , 2N5322R , 2N5322V , 2N5322W , 2N5322Y , 2N5323 , 2N5323BL , 2N5323BR .
