TRR75-10 Datasheet and Replacement

   Type Designator: TRR75-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 75 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO66
     - BJT ⓘ Cross-Reference Search