U2T501 Datasheet and Replacement

   Type Designator: U2T501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2
   Noise Figure, dB: -
   Package: TO66
      - BJT Cross-Reference Search