U2T712 Datasheet and Replacement

   Type Designator: U2T712
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO33
     - BJT ⓘ Cross-Reference Search