UMB16N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMB16N
SMD Transistor Code: B16
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-88
UMB16N Transistor Equivalent Substitute - Cross-Reference Search
UMB16N Datasheet (PDF)
pemb16 pumb16.pdf
PEMB16; PUMB16PNP/PNP resistor-equipped transistors;R1 = 22 k, R2 = 47 kRev. 03 31 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB16 SOT666 - PEMD16 PEMH16PUMB16 SOT363 SC-88 PUMD16 PUMH161.2 Features Bui
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