UMH10N Specs and Replacement
Type Designator: UMH10N
SMD Transistor Code: H10
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC88 SOT353
UMH10N Transistor Equivalent Substitute - Cross-Reference Search
UMH10N detailed specifications
umh10n imh10a h10 sot23-6 sot363.pdf
Transistors General purpose (dual digital transistors) UMH10N / IMH10A FFeatures FExternal dimensions (Units mm) 1) Two DTC123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN ... See More ⇒
umh10n.pdf
Transistors General purpose (dual digital transistors) UMH10N / IMH10A FFeatures FExternal dimensions (Units mm) 1) Two DTC123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN ... See More ⇒
umh10n.pdf
UMH10N General purpose transistors (dual transistors) SOT-363 FEATURES Two DTC123J chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking H10 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Supp... See More ⇒
emh10fha umh10nfha.pdf
AEC-Q101 Qualified General purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHA Structure Dimensions (Unit mm) Epitaxial planar type NPN silicon transistor EMH10FHA EMH10 (Built-in resistor type) (4) (3) (5) (2) (6) (1) Features 1.2 1.6 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi... See More ⇒
Detailed specifications: UMG1N , UMG2N , UMG3N , UMG4N , UMG5N , UMG6N , UMG8N , UMG9N , 2SD669A , UMH11N , UMH1N , UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , UMH7N .
History: UMH11N | BC850CW-AU | UMH1N | MMBTRC105SS | 2SD823
Keywords - UMH10N transistor specs
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History: UMH11N | BC850CW-AU | UMH1N | MMBTRC105SS | 2SD823
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