UMT1012 Specs and Replacement
Type Designator: UMT1012
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 360 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO3
UMT1012 Transistor Equivalent Substitute - Cross-Reference Search
UMT1012 detailed specifications
NO specs!
Detailed specifications: UMH9N , UMS1N , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 , UMT1011 , D882P , UMT1203 , UMT1204 , UMT13004 , UMT13005 , UMT13006 , UMT13007 , UMT13008 , UMT13009 .
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