All Transistors. UN1112 Datasheet

 

UN1112 Datasheet and Replacement


   Type Designator: UN1112
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: M-A1
 

 UN1112 Substitution

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UN1112 Datasheet (PDF)

 ..1. Size:263K  panasonic
 un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf pdf_icon

UN1112

Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and

Datasheet: UMY1N , UMY3N , UMZ1N , UMZ2N , UN1110Q , UN1110R , UN1110S , UN1111 , 13003 , UN1113 , UN1114 , UN1115Q , UN1115R , UN1115S , UN1116Q , UN1116R , UN1116S .

Keywords - UN1112 transistor datasheet

 UN1112 cross reference
 UN1112 equivalent finder
 UN1112 lookup
 UN1112 substitution
 UN1112 replacement

 

 
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