UN1112 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN1112
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.4
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: M-A1
UN1112 Transistor Equivalent Substitute - Cross-Reference Search
UN1112 Datasheet (PDF)
un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf
Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
