All Transistors. UN1114 Datasheet

 

UN1114 Datasheet and Replacement


   Type Designator: UN1114
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: M-A1
 

 UN1114 Substitution

   - BJT ⓘ Cross-Reference Search

   

UN1114 Datasheet (PDF)

 ..1. Size:263K  panasonic
 un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf pdf_icon

UN1114

Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and

Datasheet: UMZ1N , UMZ2N , UN1110Q , UN1110R , UN1110S , UN1111 , UN1112 , UN1113 , 100DA025D , UN1115Q , UN1115R , UN1115S , UN1116Q , UN1116R , UN1116S , UN1117Q , UN1117R .

History: IT127TO71 | MP5400 | SRA2203E | KT913B | MPSW57 | 2SD558

Keywords - UN1114 transistor datasheet

 UN1114 cross reference
 UN1114 equivalent finder
 UN1114 lookup
 UN1114 substitution
 UN1114 replacement

 

 
Back to Top

 


 
.