UN1118 PDF and Equivalents Search

 

UN1118 PDF Specs and Replacement


   Type Designator: UN1118
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 0.51 kOhm
   Built in Bias Resistor R2 = 5.1 kOhm
   Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: M-A1
 

 UN1118 Substitution

   - BJT ⓘ Cross-Reference Search

   

UN1118 PDF detailed specifications

 ..1. Size:263K  panasonic
 un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf pdf_icon

UN1118

Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ Unit mm 111D/111E/111F/111H/111L) 2.5 0.1 6.9 0.1 (1.0) (1.5) Silicon PNP epitaxial planar transistor (1.5) R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment and... See More ⇒

Detailed specifications: UN1115R , UN1115S , UN1116Q , UN1116R , UN1116S , UN1117Q , UN1117R , UN1117S , 2SC4793 , UN1119 , UN111D , UN111E , UN111F , UN111H , UN111L , UN1121 , UN1122 .

Keywords - UN1118 pdf specs

 UN1118 cross reference
 UN1118 equivalent finder
 UN1118 pdf lookup
 UN1118 substitution
 UN1118 replacement

 

 
Back to Top

 


 
.