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UN111D PDF Specs and Replacement


   Type Designator: UN111D
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 4.7

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: M-A1
 

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UN111D PDF detailed specifications

 ..1. Size:263K  panasonic
 un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf pdf_icon

UN111D

Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ Unit mm 111D/111E/111F/111H/111L) 2.5 0.1 6.9 0.1 (1.0) (1.5) Silicon PNP epitaxial planar transistor (1.5) R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment and... See More ⇒

Detailed specifications: UN1116Q , UN1116R , UN1116S , UN1117Q , UN1117R , UN1117S , UN1118 , UN1119 , 2SC1815 , UN111E , UN111F , UN111H , UN111L , UN1121 , UN1122 , UN1123 , UN1124 .

History: KT326B

Keywords - UN111D pdf specs

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