UN111E Datasheet. Specs and Replacement

Type Designator: UN111E  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: M-A1

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UN111E datasheet

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UN111E

Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ Unit mm 111D/111E/111F/111H/111L) 2.5 0.1 6.9 0.1 (1.0) (1.5) Silicon PNP epitaxial planar transistor (1.5) R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment and... See More ⇒

Detailed specifications: UN1116R, UN1116S, UN1117Q, UN1117R, UN1117S, UN1118, UN1119, UN111D, BD335, UN111F, UN111H, UN111L, UN1121, UN1122, UN1123, UN1124, UN112X

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