All Transistors. UN111H Datasheet

 

UN111H Datasheet and Replacement


   Type Designator: UN111H
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: M-A1
 

 UN111H Substitution

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UN111H Datasheet (PDF)

 ..1. Size:263K  panasonic
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UN111H

Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and

Datasheet: UN1117Q , UN1117R , UN1117S , UN1118 , UN1119 , UN111D , UN111E , UN111F , S8550 , UN111L , UN1121 , UN1122 , UN1123 , UN1124 , UN112X , UN112Y , UN1210Q .

History: 2SC2693 | BSV43 | NSBA124XF3 | BLW65 | BDY39-4 | 2SB444H | D6C

Keywords - UN111H transistor datasheet

 UN111H cross reference
 UN111H equivalent finder
 UN111H lookup
 UN111H substitution
 UN111H replacement

 

 
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