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UN1122 PDF Specs and Replacement


   Type Designator: UN1122
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: M-A1
 

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UN1122 PDF detailed specifications

 ..1. Size:142K  panasonic
 un1121 un1122 un1123 un1124 un112x un112y.pdf pdf_icon

UN1122

Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit mm 2.5 0.1 For digital circuits 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Costs can be reduced through downsizing of the equipment and R 0.7 reduction of the number of parts. M type package allowing easy automatic and manual ins... See More ⇒

Detailed specifications: UN1118 , UN1119 , UN111D , UN111E , UN111F , UN111H , UN111L , UN1121 , TIP35C , UN1123 , UN1124 , UN112X , UN112Y , UN1210Q , UN1210R , UN1210S , UN1211 .

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