UN1122 Datasheet. Specs and Replacement

Type Designator: UN1122  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: M-A1

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UN1122 datasheet

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UN1122

Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y (UN1121/1122/1123/1124/112X/112Y) Silicon PNP epitaxial planer transistor Unit mm 2.5 0.1 For digital circuits 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Costs can be reduced through downsizing of the equipment and R 0.7 reduction of the number of parts. M type package allowing easy automatic and manual ins... See More ⇒

Detailed specifications: UN1118, UN1119, UN111D, UN111E, UN111F, UN111H, UN111L, UN1121, TIP35C, UN1123, UN1124, UN112X, UN112Y, UN1210Q, UN1210R, UN1210S, UN1211

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