UN1210S Datasheet. Specs and Replacement

Type Designator: UN1210S  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 290

Noise Figure, dB: -

Package: M-A1

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UN1210S datasheet

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 un1210q un1210r un1210s un1211 un1212 un1213 un1214 un1215q un1215r un1215s un1216q un1216r un1216s un1217q un1217r un1217s unr1210.pdf pdf_icon

UN1210S

Transistors with built-in Resistor UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ Unit mm 121D/121E/121F/121K/121L) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Silicon NPN epitaxial planar transistor R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment... See More ⇒

Detailed specifications: UN1121, UN1122, UN1123, UN1124, UN112X, UN112Y, UN1210Q, UN1210R, 2SD2499, UN1211, UN1212, UN1213, UN1214, UN1215Q, UN1215R, UN1215S, UN1216Q

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