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UN1215S PDF Specs and Replacement


   Type Designator: UN1215S
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 290
   Noise Figure, dB: -
   Package: M-A1
 

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UN1215S PDF detailed specifications

 ..1. Size:263K  panasonic
 un1210q un1210r un1210s un1211 un1212 un1213 un1214 un1215q un1215r un1215s un1216q un1216r un1216s un1217q un1217r un1217s unr1210.pdf pdf_icon

UN1215S

Transistors with built-in Resistor UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ Unit mm 121D/121E/121F/121K/121L) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Silicon NPN epitaxial planar transistor R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment... See More ⇒

Detailed specifications: UN1210R , UN1210S , UN1211 , UN1212 , UN1213 , UN1214 , UN1215Q , UN1215R , 2SC945 , UN1216Q , UN1216R , UN1216S , UN1217Q , UN1217R , UN1217S , UN1218 , UN1219 .

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