UN1216Q Datasheet. Specs and Replacement

Type Designator: UN1216Q  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: M-A1

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UN1216Q datasheet

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UN1216Q

Transistors with built-in Resistor UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ Unit mm 121D/121E/121F/121K/121L) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Silicon NPN epitaxial planar transistor R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment... See More ⇒

Detailed specifications: UN1210S, UN1211, UN1212, UN1213, UN1214, UN1215Q, UN1215R, UN1215S, A1013, UN1216R, UN1216S, UN1217Q, UN1217R, UN1217S, UN1218, UN1219, UN121D

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