All Transistors. UN1216R Datasheet

 

UN1216R Datasheet and Replacement


   Type Designator: UN1216R
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: M-A1
 

 UN1216R Substitution

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UN1216R Datasheet (PDF)

 ..1. Size:263K  panasonic
 un1210q un1210r un1210s un1211 un1212 un1213 un1214 un1215q un1215r un1215s un1216q un1216r un1216s un1217q un1217r un1217s unr1210.pdf pdf_icon

UN1216R

Transistors with built-in ResistorUNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/121D/121E/121F/121K/121L(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/Unit: mm121D/121E/121F/121K/121L)2.50.16.90.1(1.0)(1.5)(1.5)Silicon NPN epitaxial planar transistorR 0.9For digital circuitsR 0.7Features Costs can be reduced through downsizing of the equipment

Datasheet: UN1211 , UN1212 , UN1213 , UN1214 , UN1215Q , UN1215R , UN1215S , UN1216Q , 2N4401 , UN1216S , UN1217Q , UN1217R , UN1217S , UN1218 , UN1219 , UN121D , UN121E .

History: RT1N151C | BSY56

Keywords - UN1216R transistor datasheet

 UN1216R cross reference
 UN1216R equivalent finder
 UN1216R lookup
 UN1216R substitution
 UN1216R replacement

 

 
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