UN1219 PDF Specs and Replacement
Type Designator: UN1219
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: M-A1
UN1219 Substitution
UN1219 PDF detailed specifications
un1210q un1210r un1210s un1211 un1212 un1213 un1214 un1215q un1215r un1215s un1216q un1216r un1216s un1217q un1217r un1217s unr1210.pdf
Transistors with built-in Resistor UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ 121D/121E/121F/121K/121L (UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/ Unit mm 121D/121E/121F/121K/121L) 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Silicon NPN epitaxial planar transistor R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment... See More ⇒
Detailed specifications: UN1215S , UN1216Q , UN1216R , UN1216S , UN1217Q , UN1217R , UN1217S , UN1218 , 2N4401 , UN121D , UN121E , UN121F , UN121L , UN121K , UN1221 , UN1222 , UN1223 .
History: UN1217S | 3DA493TA | UN1217Q | 3DA41A | 3DA3866
Keywords - UN1219 pdf specs
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History: UN1217S | 3DA493TA | UN1217Q | 3DA41A | 3DA3866
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