UN2115Q Datasheet, Equivalent, Cross Reference Search
Type Designator: UN2115Q
SMD Transistor Code: 6E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT23 SC59
UN2115Q Transistor Equivalent Substitute - Cross-Reference Search
UN2115Q Datasheet (PDF)
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Transistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing and mag
mun2115.pdf
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2110LT1GPNP Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network2consisting of two
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
