UN2116Q Datasheet. Specs and Replacement
Type Designator: UN2116Q 📄📄
SMD Transistor Code: 6F
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
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UN2116Q Substitution
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UN2116Q datasheet
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MUN2111T1 Series, SMUN2111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two r... See More ⇒
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LMUN2110LT1G PNP Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 1 Transistor) contains a single transistor with a monolithic bias network 2 consisting of two... See More ⇒
Detailed specifications: UN2110S, UN2111, UN2112, UN2113, UN2114, UN2115Q, UN2115R, UN2115S, S9018, UN2116R, UN2116S, UN2117Q, UN2117R, UN2117S, UN2118, UN2119, UN211D
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BJT Parameters and How They Relate
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