UN4112 Datasheet. Specs and Replacement
Type Designator: UN4112 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92S
📄📄 Copy
UN4112 Substitution
- BJT ⓘ Cross-Reference Search
UN4112 datasheet
Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part N... See More ⇒
Detailed specifications: UN2221, UN2222, UN2223, UN2224, UN4110Q, UN4110R, UN4110S, UN4111, BD135, UN4113, UN4114, UN4115Q, UN4115R, UN4115S, UN4116Q, UN4116R, UN4116S
Keywords - UN4112 pdf specs
UN4112 cross reference
UN4112 equivalent finder
UN4112 pdf lookup
UN4112 substitution
UN4112 replacement
