UN4112 Specs and Replacement
Type Designator: UN4112
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92S
UN4112 Substitution
UN4112 detailed specifications
..1. Size:180K panasonic
un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf
un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf
Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part N... See More ⇒
Detailed specifications: UN2221 , UN2222 , UN2223 , UN2224 , UN4110Q , UN4110R , UN4110S , UN4111 , BD135 , UN4113 , UN4114 , UN4115Q , UN4115R , UN4115S , UN4116Q , UN4116R , UN4116S .
Keywords - UN4112 transistor specs
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