UN4115R Specs and Replacement
Type Designator: UN4115R
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: TO92S
UN4115R Substitution
UN4115R detailed specifications
un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf
Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part N... See More ⇒
Detailed specifications: UN4110Q , UN4110R , UN4110S , UN4111 , UN4112 , UN4113 , UN4114 , UN4115Q , TIP127 , UN4115S , UN4116Q , UN4116R , UN4116S , UN4117Q , UN4117R , UN4117S , UN4118 .
History: BD434C
Keywords - UN4115R transistor specs
UN4115R cross reference
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