2N5348 Specs and Replacement
Type Designator: 2N5348
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO59
2N5348 Substitution
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2N5348 datasheet
isc Silicon PNP Power Transistor 2N5345 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = -280V(Min) CEO(SUS) High Switching Speed High Current-Gain Bandwidth Product- f = 60MHz(Min)@ I = -0.1A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching and amplifier applications. AB... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION High Collector-Emitter Sustaining Voltage- VCEO(SUS)= -250V(Min) High Switching Speed High Current-Gain Bandwidth Product- fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )... See More ⇒
Detailed specifications: 2N5339, 2N5339X, 2N534, 2N5344, 2N5344A, 2N5345, 2N5345A, 2N5346, 2N3904, 2N5349, 2N535, 2N5350, 2N5351, 2N5354, 2N5355, 2N5356, 2N5357
Keywords - 2N5348 pdf specs
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History: 2N4226 | 3DA3807 | 2N4071 | BCP56-16T1 | 2N5320R | 2N5314 | BCP56-10T1
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