2N5349 Specs and Replacement
Type Designator: 2N5349
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO59
2N5349 Substitution
- BJT ⓘ Cross-Reference Search
2N5349 datasheet
isc Silicon PNP Power Transistor 2N5345 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = -280V(Min) CEO(SUS) High Switching Speed High Current-Gain Bandwidth Product- f = 60MHz(Min)@ I = -0.1A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching and amplifier applications. AB... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION High Collector-Emitter Sustaining Voltage- VCEO(SUS)= -250V(Min) High Switching Speed High Current-Gain Bandwidth Product- fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )... See More ⇒
Detailed specifications: 2N5339X, 2N534, 2N5344, 2N5344A, 2N5345, 2N5345A, 2N5346, 2N5348, 2N2222, 2N535, 2N5350, 2N5351, 2N5354, 2N5355, 2N5356, 2N5357, 2N535A
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