UN4216S Specs and Replacement
Type Designator: UN4216S
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 290
Noise Figure, dB: -
Package: TO92S
UN4216S Transistor Equivalent Substitute - Cross-Reference Search
UN4216S detailed specifications
un4210q un4210r un4210s un4211 un4212 un4213 un4214 un4215q un4215r un4215s un4216q un4216r un4216s un4217q un4218 un4219 un421d un421e un421f un421k un421l.pdf
Transistors with built-in Resistor UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L (UN4211/4212/4213/4214/4215/4216/4217/4218/4219/ 4210/421D/421E/421F/421K/421L) Unit mm 4.0 0.2 Silicon NPN epitaxial planer transistor For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. mark... See More ⇒
un4213.pdf
UN4213(3RC4213) NPN /SILICON NPN DIGITAL TRANSISTOR Purpose Switching, inverter circuit, interface circuit and driver circuit applications. Features With built-in bias resistors, simplify circuit design, reduce a q... See More ⇒
Detailed specifications: UN4212 , UN4213 , UN4214 , UN4215Q , UN4215R , UN4215S , UN4216Q , UN4216R , 2N2907 , UN4217Q , UN4217R , UN4217S , UN4218 , UN4219 , UN421D , UN421E , UN421F .
History: UN4219
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