UN421E Datasheet. Specs and Replacement
Type Designator: UN421E 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92S
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UN421E datasheet
Transistors with built-in Resistor UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L (UN4211/4212/4213/4214/4215/4216/4217/4218/4219/ 4210/421D/421E/421F/421K/421L) Unit mm 4.0 0.2 Silicon NPN epitaxial planer transistor For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. mark... See More ⇒
UN4213(3RC4213) NPN /SILICON NPN DIGITAL TRANSISTOR Purpose Switching, inverter circuit, interface circuit and driver circuit applications. Features With built-in bias resistors, simplify circuit design, reduce a q... See More ⇒
Detailed specifications: UN4216R, UN4216S, UN4217Q, UN4217R, UN4217S, UN4218, UN4219, UN421D, D882P, UN421F, UN421L, UN421K, UN4221, UN4222, UN4223, UN4224, UN5210Q
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