UN421F Datasheet, Equivalent, Cross Reference Search
Type Designator: UN421F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92S
UN421F Transistor Equivalent Substitute - Cross-Reference Search
UN421F Datasheet (PDF)
un4210q un4210r un4210s un4211 un4212 un4213 un4214 un4215q un4215r un4215s un4216q un4216r un4216s un4217q un4218 un4219 un421d un421e un421f un421k un421l.pdf
Transistors with built-in ResistorUNR4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L(UN4211/4212/4213/4214/4215/4216/4217/4218/4219/4210/421D/421E/421F/421K/421L)Unit: mm4.00.2Silicon NPN epitaxial planer transistorFor digital circuitsFeatures Costs can be reduced through downsizing of the equipment andreduction of the number of parts.mark
un4213.pdf
UN4213(3RC4213) NPN /SILICON NPN DIGITAL TRANSISTOR : Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. : Features: With built-in bias resistors, simplify circuit design, reduce a q
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
