UN4222 Specs and Replacement
Type Designator: UN4222
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92S
UN4222 Transistor Equivalent Substitute - Cross-Reference Search
UN4222 detailed specifications
un4221 un4222 un4223 un4224.pdf
Transistors with built-in Resistor UN4221/4222/4223/4224 Unit mm Silicon NPN epitaxial planer transistor 4.0 0.2 For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part Number 1 2 3 (R1)(R2) UN4221 2.2k 2.2k UN422... See More ⇒
Detailed specifications: UN4218 , UN4219 , UN421D , UN421E , UN421F , UN421L , UN421K , UN4221 , D667 , UN4223 , UN4224 , UN5210Q , UN5210R , UN5210S , UN5211 , UN5212 , UN5213 .
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