UN4223 Datasheet, Equivalent, Cross Reference Search
Type Designator: UN4223
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92S
UN4223 Transistor Equivalent Substitute - Cross-Reference Search
UN4223 Datasheet (PDF)
un4221 un4222 un4223 un4224.pdf
Transistors with built-in ResistorUN4221/4222/4223/4224Unit: mmSilicon NPN epitaxial planer transistor4.0 0.2For digital circuitsFeatures Costs can be reduced through downsizing of the equipment andreduction of the number of parts. New S type package, allowing supply with the radial taping.markingResistance by Part Number1 2 3(R1)(R2) UN4221 2.2k 2.2k UN422
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
