UN4223 Datasheet. Specs and Replacement
Type Designator: UN4223 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92S
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UN4223 datasheet
un4221 un4222 un4223 un4224.pdf 
Transistors with built-in Resistor UN4221/4222/4223/4224 Unit mm Silicon NPN epitaxial planer transistor 4.0 0.2 For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part Number 1 2 3 (R1)(R2) UN4221 2.2k 2.2k UN422... See More ⇒
Detailed specifications: UN4219, UN421D, UN421E, UN421F, UN421L, UN421K, UN4221, UN4222, BD333, UN4224, UN5210Q, UN5210R, UN5210S, UN5211, UN5212, UN5213, UN5214
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