UN5216S Datasheet. Specs and Replacement
Type Designator: UN5216S 📄📄
SMD Transistor Code: 8F
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 290
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UN5216S datasheet
Transistors with built-in Resistor UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Silicon NPN epitaxial planer transistor Unit mm For digital circuits 2.1 0.1 0.425 1.25 0.1 0.425 Features Costs can be reduced through downsizing of the equipment and 1 reduction of the number of parts. 3 S-Mini type package, allowing autom... See More ⇒
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LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor... See More ⇒
Detailed specifications: UN5212, UN5213, UN5214, UN5215Q, UN5215R, UN5215S, UN5216Q, UN5216R, BC548, UN5217Q, UN5217R, UN5217S, UN5218, UN5219, UN521D, UN521E, UN521F
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